Publication detail
SiGe Technology
BARTOŇ, Z. MUSIL, V.
English title
SiGe Technology
Type
conference paper
Language
en
Original abstract
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
English abstract
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
Keywords in English
microelectronics, technology, SiGe structures
RIV year
2001
Released
02.09.2001
Publisher
Ing. Zdeněk Novotný, CSc.
Location
Brno
ISBN
80-214-2027-8
Book
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings
Pages count
15
BIBTEX
@inproceedings{BUT4065,
author="Zdeněk {Bartoň} and Vladislav {Musil},
title="SiGe Technology",
booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings",
year="2001",
month="September",
publisher="Ing. Zdeněk Novotný, CSc.",
address="Brno",
isbn="80-214-2027-8"
}