Publication detail

SiGe Technology

BARTOŇ, Z. MUSIL, V.

English title

SiGe Technology

Type

conference paper

Language

en

Original abstract

This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.

English abstract

This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.

Keywords in English

microelectronics, technology, SiGe structures

RIV year

2001

Released

02.09.2001

Publisher

Ing. Zdeněk Novotný, CSc.

Location

Brno

ISBN

80-214-2027-8

Book

Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings

Pages count

15

BIBTEX


@inproceedings{BUT4065,
  author="Zdeněk {Bartoň} and Vladislav {Musil},
  title="SiGe Technology",
  booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings",
  year="2001",
  month="September",
  publisher="Ing. Zdeněk Novotný, CSc.",
  address="Brno",
  isbn="80-214-2027-8"
}