Detail publikace
SiGe Technology
BARTOŇ, Z. MUSIL, V.
Anglický název
SiGe Technology
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
en
Originální abstrakt
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
Anglický abstrakt
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
Klíčová slova anglicky
microelectronics, technology, SiGe structures
Rok RIV
2001
Vydáno
02.09.2001
Nakladatel
Ing. Zdeněk Novotný, CSc.
Místo
Brno
ISBN
80-214-2027-8
Kniha
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings
Počet stran
15
BIBTEX
@inproceedings{BUT4065,
author="Zdeněk {Bartoň} and Vladislav {Musil},
title="SiGe Technology",
booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings",
year="2001",
month="September",
publisher="Ing. Zdeněk Novotný, CSc.",
address="Brno",
isbn="80-214-2027-8"
}