Publication detail

Strain mapping by Scanning Low Energy Electron Microscopy

MIKMEKOVÁ, Š. MAN, O. PANTĚLEJEV, L. HOVORKA, M. MÜLLEROVÁ, I. FRANK, L. KOUŘIL, M.

Czech title

Mapování pnutí pomocí SLEEM

English title

Strain mapping by Scanning Low Energy Electron Microscopy

Type

journal article - other

Language

en

Original abstract

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.

Czech abstract

Využití rastrovací mikroskopie pomalými elektrony (SLEEM) si pomalu razí cestu do oblasti materiálových věd, zdržována netoliko omezími techniky samotné, jako spíše relativní nečetností příslušných zařízení na vědeckých pracovištích a v laboratořích. Tento článek se přináší výsledky dosažené vyšetřováním mikrostruktury ultrajemnozrnné (UFG) mědi, vyrobené metodou bezkontrakčního protlačování (ECAP), zejména ve stavu po tváření a po žíhání. SLEEM je velmi citlivá na dokonalost krystalové mřížky, pročež s jejích využitím lze efektivně mapovat lokální pnutí.

English abstract

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.

Keywords in Czech

rastrovací mikroskopie pomalými elektrony (SLEEM), krystalografický kontrast, mikroskopická pnutí

Keywords in English

scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain

RIV year

2010

Released

01.03.2011

Publisher

Trans Tech Publications

Location

Switzerland

ISSN

1013-9826

Journal

Key Engineering Materials

Volume

465

Number

1

Pages from–to

338–341

Pages count

4

BIBTEX


@article{BUT49965,
  author="Šárka {Mikmeková} and Ondřej {Man} and Libor {Pantělejev} and Miloš {Hovorka} and Ilona {Müllerová} and Luděk {Frank} and Miloslav {Kouřil},
  title="Strain mapping by Scanning Low Energy Electron Microscopy",
  journal="Key Engineering Materials",
  year="2011",
  volume="465",
  number="1",
  month="March",
  pages="338--341",
  publisher="Trans Tech Publications",
  address="Switzerland",
  issn="1013-9826"
}