Publication detail

Influence of technological conditions on mechanical stresses inside diamond-like carbon films

OHLÍDAL, I. OHLÍDAL, M. FRANTA, D.

Czech title

Vliv technologických podmínek na mechanická napětí v DLC vrstvách

English title

Influence of technological conditions on mechanical stresses inside diamond-like carbon films

Type

journal article in Web of Science

Language

en

Original abstract

The influences of the technological conditions on the values of the intrinsic mechanical stresses inside DLC thin films prepared by PECVD method onto silicon subtrates are studied. These stresses are measured by two-beam interferometry and optical profilometry based on chromatic aberration through the neasurements of deformations of the silicon substrates originating in consequence of the film stresses. It is shown that the influence of the deposition time (i.e film thickness) on the film stress is relatively slight in contrast to the influence of the hydrogen flow rate on this quantity. It is namely shown that the film stresses are influenced by the hydrogen flow rate values in a pronounced way within the the interval 1-7 sccm. Moreover, it is shown that the method of optical profilometry used can be competitive to the method of two-beam interferometry from the practical point of view.

Czech abstract

Je studován vliv technologických podmínek, tj. vliv velikosti toku vodíku a vliv depoziční doby na hodnoty vnitřních mechanických napětí v DLC tenkých vrstvách připravených PECVD metodou na křemíkových podložkách. Tato napětí jsou jsou měřena dvoupaprskovou interferometrií a optickou profilometrií založenou na chromatické aberaci prostřednictvím měření deformací křemíkových podložek vyvolaných napětími ve vrstvách. Je ukázáno, že vliv depoziční doby (tj. tloušťky vrstvy)na napětí ve vrstvě je relativně malý ve srovnání s vlivem velikosti toku vodíku. Zejména v intervalu toku vodíku 1-7 sccm je tento vliv zvýrazněn. Navíc bylo ukázáno, že použitá metoda optické profilometrie může být z praktického hlediska ekvivalentní metodě dvoupaprsokvé interferometrie.

English abstract

The influences of the technological conditions on the values of the intrinsic mechanical stresses inside DLC thin films prepared by PECVD method onto silicon subtrates are studied. These stresses are measured by two-beam interferometry and optical profilometry based on chromatic aberration through the neasurements of deformations of the silicon substrates originating in consequence of the film stresses. It is shown that the influence of the deposition time (i.e film thickness) on the film stress is relatively slight in contrast to the influence of the hydrogen flow rate on this quantity. It is namely shown that the film stresses are influenced by the hydrogen flow rate values in a pronounced way within the the interval 1-7 sccm. Moreover, it is shown that the method of optical profilometry used can be competitive to the method of two-beam interferometry from the practical point of view.

Keywords in Czech

Mechanické napětí, DLC, optické metody

Keywords in English

Mechanical stress, DLC, Optical methods

RIV year

2005

Released

01.11.2005

Publisher

ELSEVIER SCIENCE SA

Location

LAUSANNE, SWITZERLAND

ISSN

0925-9635

Journal

Diamond and Related Materials

Volume

14

Number

11-12

Pages from–to

1835–1838

Pages count

4

BIBTEX


@article{BUT45891,
  author="Ivan {Ohlídal} and Miloslav {Ohlídal} and Daniel {Franta} and Vladimír {Čudek} and Vilma {Buršíková} and Petr {Klapetek} and Kateřina {Brillová},
  title="Influence of technological conditions on mechanical stresses inside diamond-like carbon films",
  journal="Diamond and Related Materials",
  year="2005",
  volume="14",
  number="11-12",
  month="November",
  pages="1835--1838",
  publisher="ELSEVIER SCIENCE SA",
  address="LAUSANNE, SWITZERLAND",
  issn="0925-9635"
}