Publication detail

Transport and Noise properties of CdTe(Cl) Crystals

SCHAUER, P. ŠIKULA, J.

English title

Transport and Noise properties of CdTe(Cl) Crystals

Type

journal article - other

Language

en

Original abstract

Experimental studies of transport and noise characteristics of CdTe (Cl doped) crystals, prepared by travelling heater method, have been carried out. The basic material is of p-type with p = 1.8 x 10(14) m(-3), mu (h) = 0.0065 m(2) V-1 s(-1), mu (o) = 0.13 m(2) V-1 s(-1). The current and noise spectral density was measured as a function of the sample illumination, voltages across the sample and incident light wavelengths. Two types of effective charge carrier mobility are assumed: namely, the effectivetransport mobility, which is 0.065 m(2) V-1 s(-1) and the effective noise mobility, which reaches a value of 0.125 m(2) V-1 s(-1), both for high illumination. Under the same conditions, the density of light generated charge carrier pairs is 1.7 x 10(15)m(-3). Experimental results are in a good agreement with the four-level recombination model. The values of 1/f noise parameter alpha range from 4 x 10(-4) to 2.5 x 10(-3). The alpha parameter grows with almost the photocurrent square root.

English abstract

Experimental studies of transport and noise characteristics of CdTe (Cl doped) crystals, prepared by travelling heater method, have been carried out. The basic material is of p-type with p = 1.8 x 10(14) m(-3), mu (h) = 0.0065 m(2) V-1 s(-1), mu (o) = 0.13 m(2) V-1 s(-1). The current and noise spectral density was measured as a function of the sample illumination, voltages across the sample and incident light wavelengths. Two types of effective charge carrier mobility are assumed: namely, the effectivetransport mobility, which is 0.065 m(2) V-1 s(-1) and the effective noise mobility, which reaches a value of 0.125 m(2) V-1 s(-1), both for high illumination. Under the same conditions, the density of light generated charge carrier pairs is 1.7 x 10(15)m(-3). Experimental results are in a good agreement with the four-level recombination model. The values of 1/f noise parameter alpha range from 4 x 10(-4) to 2.5 x 10(-3). The alpha parameter grows with almost the photocurrent square root.

Keywords in English

CdTe, Cadmium telluride, II-VI compounds, Photo-conduction, 1/f noise parameter, Charge carrier density, Charge carrier mobility, Sensor, Detector

RIV year

2001

Released

01.01.2001

ISSN

0026-2714

Volume

41

Number

3

Pages count

6

BIBTEX


@article{BUT40540,
  author="Pavel {Schauer} and Josef {Šikula},
  title="Transport and Noise properties of CdTe(Cl) Crystals",
  year="2001",
  volume="41",
  number="3",
  month="January",
  issn="0026-2714"
}