Lokální spektroskopie pomocí optického rastrovacího mikroskopu v blízkém poli

Local spectroscopy by scanning near-field optical microscopy

článek v časopise - ostatní, Jost

en

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions – of the material luminescence (PL), and – the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

Spektroskopická měření fotoluminiscence byla dlouhou dobu považována za velmi účinnou nedestruktivní techniku pro zjišťování vlastností polovodičových rozhraní.S nástupem optického rastrovacího tunelového mikroskopu je možné provádět tato měření v pokojové teplotě a normýlním tlaku. Článek přináší porovnání fotoluminiscenčních spekter v blízké a vzdálené optické oblasti a ukazuje na některé z předností měření v blízkém poli.

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions – of the material luminescence (PL), and – the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

fotoluminiscence, lokální charakteristiky, SNOM

photoluminescence, local characteristics, SNOM,

2004

02.05.1998

1210-2717

Inženýrská mechanika - Engineering Mechanics

5

3

4