Detail publikace

Modelling of the Czochralski flow

FRANCŮ, J.

Anglický název

Modelling of the Czochralski flow

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

Czochralski method of industrial production of silicon single crystal consists in pulling up the single crystal from Silicon melt. The flow of the melt during this production is called Czochralski flow. Its character determines concentration of desired oxygen impurity in the crystal. The mathematical description of the Czochralski flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), heat convection-conduction equation, convection-diffusion equation for oxygen impurity and an equation describing magnetic field effect. The paper contains derivation of the model, its weak and operator formulation, its justification and proof of existence of solution to the both stationary and evolutionary problems.

Klíčová slova anglicky

Czochralski flow, mathematical modelling, weak formulation

Vydáno

1998-01-01

ISSN

1085-3375

Ročník

3

Číslo

1-2

Strany od–do

1–40

Počet stran

40

BIBTEX


@article{BUT38838,
  author="Jan {Franců}",
  title="Modelling of the Czochralski flow",
  journal="Abstract and Applied Analysis",
  year="1998",
  volume="3",
  number="1-2",
  pages="1--40",
  issn="1085-3375"
}