Úplná optická charakterizace systému Si/SiO2 spektroskopickou reflektometrií, spektroskopickou elipsometrií a mikroskopií atomové síly

Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

článek v časopise - ostatní, Jost

en

Results concerning optical analysis of the SiO2/Si system performed by combined ellipsometric and reflectometric method used in multiple-sample modification are presented. This method is based on combining both single-wavelength method and the dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with a transition layer and the layer with rough boundaries are used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of other parameters are determined. It is shown that that the simplest model with the smooth boundary is the most convinient with the experimental data.

Jsou prezentovány výsledky optické analýzy systému SiO2/Si získané kombinovanou elipsometrickou a reflektometrickou metodou. Tato metoda je založena na kombinaci jednovlnové a disperzní metody. K interpretaci experimentálních dat jsou použity tři modely: model a vrstva s hladkými rozhraními, tentýž model s přechodovou vrstvou a model substrát a vrstva s drsnými rozhraními. Jsou určeny spektrální závislosti optických konstant a dalších parametrů Si a SiO2. Experimentálním datům nejlépe vyhovuje nejjednodušší model s hladkými rozhraními.

Results concerning optical analysis of the SiO2/Si system performed by combined ellipsometric and reflectometric method used in multiple-sample modification are presented. This method is based on combining both single-wavelength method and the dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with a transition layer and the layer with rough boundaries are used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of other parameters are determined. It is shown that that the simplest model with the smooth boundary is the most convinient with the experimental data.

Optické konstanty Si a SiO2, spektroskopická reflektometrie, spektroskopická elipsometrie

optical constants of Si and SiO2; spectroscopic reflectometry; spectroscopic ellipsometry

1999

01.08.1999

0142-2421

Surface and Interface Analysis

28

1

5