Optická charakterizace neuniformních tenkých vrstev pomocí zobrazovací spektrofotometrie

Optical characterization of non-uniform thin films using imaging spectrophotometry

článek ve sborníku ve WoS nebo Scopus

en

In this paper the method of imaging spectrophotometry enabling us to characterize non-absorbing thin films non-uniform in the optical parameters is described. This method is based on interpreting the spectral dependences of the local absolute reflectances measured at the normal incidence of light. It is shown how to determine the area distribution of thickness and refractive index of the non-absorbing non-uniform thin films by treating these reflectances. Moreover, the generalization of the method for the optical characterization of slightly absorbing non-uniform thin films is also indicated. Furthermore, the two-channel imaging spectrophotometer enabling us to apply the method of imaging reflectometry is described. The procedure for determining the spectral dependences of the local absolute reflectance in the points aligned in a matrix situated on the illuminated area of the non-uniform thin film by means of the spectrophotometer is also presented. The practical advantages of the method are specified. The method is illustrated by means of the optical characterization of a selected epitaxial ZnSe thin film prepared using molecular beam epitaxy onto gallium arsenide single-crystal substrate.

Je popsána metoda zobrazovací spektrofotometrie umožňující charakterizovat neabsorbující tenké vrstvy neuniformní v optických parametrech. Metoda je založena na interpretaci spektrálních závislostí lokální absolutní odrazivosti. Je rovněž uvedeno zobecnění metody na slabě absorbující vrstvy. Dále je popsán dvoukanálový spektrofotometr pro aplikaci metody. Je uvedena procedura určení spektrálních závislostí lokální absolutní odrazivosti v bodech matice na ozářené ploše neuniformní tenké vrstvy, Jsou diskutovány výhody metody. Metoda je ilustrována optickou charakterizací vybraných epitaxních ZnSe tenkých vrstev na GaAs monokrystalu jako podložce.

In this paper the method of imaging spectrophotometry enabling us to characterize non-absorbing thin films non-uniform in the optical parameters is described. This method is based on interpreting the spectral dependences of the local absolute reflectances measured at the normal incidence of light. It is shown how to determine the area distribution of thickness and refractive index of the non-absorbing non-uniform thin films by treating these reflectances. Moreover, the generalization of the method for the optical characterization of slightly absorbing non-uniform thin films is also indicated. Furthermore, the two-channel imaging spectrophotometer enabling us to apply the method of imaging reflectometry is described. The procedure for determining the spectral dependences of the local absolute reflectance in the points aligned in a matrix situated on the illuminated area of the non-uniform thin film by means of the spectrophotometer is also presented. The practical advantages of the method are specified. The method is illustrated by means of the optical characterization of a selected epitaxial ZnSe thin film prepared using molecular beam epitaxy onto gallium arsenide single-crystal substrate.

neuniformní tenké vrstvy, zobrazovací spektrofotometrie, epitaxní ZnSe tenké vrstvy

non-uniform thin films, imaging spectrophotometry, epitaxial ZnSe thin films

2005

01.10.2005

Society of Photo-Optical Instrumentation Engineers (SPIE)

Bellingham, Washington, USA

0-8194-5951-8

0277-786X

Proceedings of SPIE - Advances in Optical Thin Films II

5963

596329-1–596329-8

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