Detail publikace

Impact of d-states on transition metal impurity diffusion in TiN

NAYAK, G. HOLEC, D. ZELENÝ, M.

Anglický název

Impact of d-states on transition metal impurity diffusion in TiN

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

en

Originální abstrakt

In this work, we studied the energetics of diffusion-related quantities of transition-metal impurities in TiN, a prototype ceramic protective coating. We use ab-initio calculations to construct a database of impurity formation energies, vacancy-impurity binding energies, migration, and activation energies of 3d and selected 4d and 5d elements for the vacancy-mediated diffusion process. The obtained trends suggest that the trends in migration and activation energies are not fully anti-correlated with the size of the migration atom. We argue that this is caused by a strong impact of chemistry in terms of binding. We quantified this effect for selected cases using the density of electronic states, Crystal Orbital Hamiltonian Population analysis, and charge density analysis. Our results show that the bonding of impurities in the initial state of a diffusion jump (equilibrium lattice position), as well as the charge directionality at the transition state (energy maximum along the diffusion jump pathway), significantly impact the activation energies.

Anglický abstrakt

In this work, we studied the energetics of diffusion-related quantities of transition-metal impurities in TiN, a prototype ceramic protective coating. We use ab-initio calculations to construct a database of impurity formation energies, vacancy-impurity binding energies, migration, and activation energies of 3d and selected 4d and 5d elements for the vacancy-mediated diffusion process. The obtained trends suggest that the trends in migration and activation energies are not fully anti-correlated with the size of the migration atom. We argue that this is caused by a strong impact of chemistry in terms of binding. We quantified this effect for selected cases using the density of electronic states, Crystal Orbital Hamiltonian Population analysis, and charge density analysis. Our results show that the bonding of impurities in the initial state of a diffusion jump (equilibrium lattice position), as well as the charge directionality at the transition state (energy maximum along the diffusion jump pathway), significantly impact the activation energies.

Klíčová slova anglicky

ab initio, diffusion, impurity, nitrides

Vydáno

22.05.2023

Nakladatel

Springer Nature

Místo

BERLIN

ISSN

2045-2322

Ročník

13

Číslo

1

Strany od–do

1–11

Počet stran

11

BIBTEX


@article{BUT187161,
  author="Ganesh Kumar {Nayak} and David {Holec} and Martin {Zelený},
  title="Impact of d-states on transition metal impurity diffusion in TiN",
  year="2023",
  volume="13",
  number="1",
  month="May",
  pages="1--11",
  publisher="Springer Nature",
  address="BERLIN",
  issn="2045-2322"
}