Detail publikace
Impact of d-states on transition metal impurity diffusion in TiN
NAYAK, G. HOLEC, D. ZELENÝ, M.
Anglický název
Impact of d-states on transition metal impurity diffusion in TiN
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
en
Originální abstrakt
In this work, we studied the energetics of diffusion-related quantities of transition-metal impurities in TiN, a prototype ceramic protective coating. We use ab-initio calculations to construct a database of impurity formation energies, vacancy-impurity binding energies, migration, and activation energies of 3d and selected 4d and 5d elements for the vacancy-mediated diffusion process. The obtained trends suggest that the trends in migration and activation energies are not fully anti-correlated with the size of the migration atom. We argue that this is caused by a strong impact of chemistry in terms of binding. We quantified this effect for selected cases using the density of electronic states, Crystal Orbital Hamiltonian Population analysis, and charge density analysis. Our results show that the bonding of impurities in the initial state of a diffusion jump (equilibrium lattice position), as well as the charge directionality at the transition state (energy maximum along the diffusion jump pathway), significantly impact the activation energies.
Anglický abstrakt
In this work, we studied the energetics of diffusion-related quantities of transition-metal impurities in TiN, a prototype ceramic protective coating. We use ab-initio calculations to construct a database of impurity formation energies, vacancy-impurity binding energies, migration, and activation energies of 3d and selected 4d and 5d elements for the vacancy-mediated diffusion process. The obtained trends suggest that the trends in migration and activation energies are not fully anti-correlated with the size of the migration atom. We argue that this is caused by a strong impact of chemistry in terms of binding. We quantified this effect for selected cases using the density of electronic states, Crystal Orbital Hamiltonian Population analysis, and charge density analysis. Our results show that the bonding of impurities in the initial state of a diffusion jump (equilibrium lattice position), as well as the charge directionality at the transition state (energy maximum along the diffusion jump pathway), significantly impact the activation energies.
Klíčová slova anglicky
ab initio, diffusion, impurity, nitrides
Vydáno
22.05.2023
Nakladatel
Springer Nature
Místo
BERLIN
ISSN
2045-2322
Ročník
13
Číslo
1
Strany od–do
1–11
Počet stran
11
BIBTEX
@article{BUT187161,
author="Ganesh Kumar {Nayak} and David {Holec} and Martin {Zelený},
title="Impact of d-states on transition metal impurity diffusion in TiN",
year="2023",
volume="13",
number="1",
month="May",
pages="1--11",
publisher="Springer Nature",
address="BERLIN",
issn="2045-2322"
}