Depozice H-DLC filmů

Cascaded Arc Deposited Diamond Like Hydrogenated Carbon Films

článek ve sborníku ve WoS nebo Scopus

en

Diamond like hydrogenated carbon films have been formed on different substrates at very low energies and temperatures by PECVD process employing acetylene as the precursor gas. The plasma source was of a cascaded arc type with Ar as carrier gas. The films grown at ultra fast rates were found a practical thickness limit of ~1 ?m above which delamination from the substrate occurred. Deposition on Si (100), glass and plastic substrates has been studied and the films characterized in terms of sp3 content, roughness, hardness and adhesion. Deposition rates up to 20 nm/sec have been achieved at substrate temperatures below 100C. The typical sp3 content of 60-75% in the films was determined by a combination of XPS and XAES techniques. The hardness and adhesion of the films was measured using a MicroMaterials Nano Test Indenter/Scratch tester. Hardness was found to vary from 5 to 11 GPa depending on the admixed acetylene flow. Adhesion was found to increase drastically when in situ cleaning of the substrate was employed. Modelling of the film growth on Si substrate and of dissociation patterns in the plasma was attempted using HyperChem software.

Byla provedena deposice H-DLC filmů na různé druhy substrátů s využitím technologie PECVD a acetylénu. Filmy H-DLC na substrátech na bázi Si (100), skla a plastů byly zkoumány z hlediska obsahu sp3 vazeb, drsnosti, tvrdosti a adheze. Tvrdost filmů se pohybovala v rozmezí 5-11 GPa a obsah sp3 vazeb 60-75%. Modelování tvoby DLC filmů na Si substrátu a disociace molekul acetylenu v plazmě (Ar) bylo provedeno za pomocí softwaru Hyperchem.

Diamond like hydrogenated carbon films have been formed on different substrates at very low energies and temperatures by PECVD process employing acetylene as the precursor gas. The plasma source was of a cascaded arc type with Ar as carrier gas. The films grown at ultra fast rates were found a practical thickness limit of ~1 ?m above which delamination from the substrate occurred. Deposition on Si (100), glass and plastic substrates has been studied and the films characterized in terms of sp3 content, roughness, hardness and adhesion. Deposition rates up to 20 nm/sec have been achieved at substrate temperatures below 100C. The typical sp3 content of 60-75% in the films was determined by a combination of XPS and XAES techniques. The hardness and adhesion of the films was measured using a MicroMaterials Nano Test Indenter/Scratch tester. Hardness was found to vary from 5 to 11 GPa depending on the admixed acetylene flow. Adhesion was found to increase drastically when in situ cleaning of the substrate was employed. Modelling of the film growth on Si substrate and of dissociation patterns in the plasma was attempted using HyperChem software.

DLC, PECVD, deposition, modelling

2005

20.09.2005

ČSNMT Praha 2005

Brno University of Technology

80-214-2984-4

Juniormat '05

5

199–202

4