Růst vertikálního grafenu na slitině AlCu4Mg užitím PECVD techniky

Vertical Graphene Growth on AlCu4Mg Alloy by PECVD Technique

článek v časopise ve Web of Science, Jimp

en

Vertical graphene, which belongs to nanomaterials, is a very promising tool for improving the useful properties of long-used and proven materials. Since the growth of vertical graphene is different on each base material and has specific deposition setting parameters, it is necessary to examine each base material separately. For this reason, a full factor design of experiment was performed with 2(6) = 64 rounds, which contained additional 5 central points, i.e., a total of 69 rounds of individual experiments, which was to examine the effect of input factors Temperature, Pressure, Flow, CH4, Plasma Power, and Annealing in H-2 on the growth of vertical graphene on aluminum alloy AlCu4Mg. The deposition was performed using plasma-enhanced chemical vapor deposition (PECVD) technology. Mainly, the occurrence of graphene was analyzed, which was confirmed by Raman spectroscopy, as well as its thickness. The characterization was performed using electron and transmission microscopy, including an atomic force microscope. It was found that the growth of graphene occurred in 7 cases and its thickness is affected only by the interaction flow (sccm) x pretreatment H-2 (sccm).

Vertikální grafen patřící mezi nanomateriály, je velmi slibným nástrojem pro zlepšení užitných vlastností dlouhodobě používaných a praxí ověřených materiálů. Vzhledem k tomu, že růst vertikálního grafenu je na každém základním materiálu odlišný a má specifické parametry nastavení depozice, je nezbytné zkoumat každý základní materiál zvlášť. Z toho důvodu byl proveden plný faktorový plánovaný experiment s 26= 64 koly, který obsahoval navíc 5 centrálních bodů, tedy celkem 69 kol jednotlivých experimentů, který měl zkoumat vliv vstupních faktorů Teplota, Tlak, Průtok, CH4, Výkon plasmatu a Žíhání v H2 na růst vertikálního grafenu na hliníkové slitině AlCu4Mg. Depozice byla prováděna užitím technologie plazmou zesílená depozice z plynné fáze (PECVD). Analyzován byl především výskyt grafenu, který byl potvrzen pomocí Ramanovy spektroskopie a také jeho tloušťka. Charakterizace byla provedena užitím elektronové a transmisní mikroskopie včetně mikroskopu atomárních sil. Bylo zjištěno, že na růst grafenu nastal v 7mi případech a jeho tloušťku ovlivňuje pouze interakce Flow (sccm)*Pretreatment H2 (sccm).

Vertical graphene, which belongs to nanomaterials, is a very promising tool for improving the useful properties of long-used and proven materials. Since the growth of vertical graphene is different on each base material and has specific deposition setting parameters, it is necessary to examine each base material separately. For this reason, a full factor design of experiment was performed with 2(6) = 64 rounds, which contained additional 5 central points, i.e., a total of 69 rounds of individual experiments, which was to examine the effect of input factors Temperature, Pressure, Flow, CH4, Plasma Power, and Annealing in H-2 on the growth of vertical graphene on aluminum alloy AlCu4Mg. The deposition was performed using plasma-enhanced chemical vapor deposition (PECVD) technology. Mainly, the occurrence of graphene was analyzed, which was confirmed by Raman spectroscopy, as well as its thickness. The characterization was performed using electron and transmission microscopy, including an atomic force microscope. It was found that the growth of graphene occurred in 7 cases and its thickness is affected only by the interaction flow (sccm) x pretreatment H-2 (sccm).

Vertikální grafen; PECVD; hliníková slitina; AlCu4Mg

vertical graphene; PECVD; aluminum alloy; AlCu4Mg

02.10.2021

MDPI

BASEL

2079-6412

11

9

1–13

13