Detail publikace
In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111)
ARIAS, P. TESAŘ, J. KAVNER, A. ŠIKOLA, T. KODAMBAKA, S.
Anglický název
In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111)
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
en
Originální abstrakt
Using a combination of in situ ultra-high vacuum variable-temperature scanning tunneling microscopy, ex situ Raman spectroscopy, and scanning electron microscopy, we investigated the growth of graphene using benzene on Pd(111) at temperatures up to 1100 K. Benzene adsorbs readily on Pd(111) at room-temperature and forms an ordered superstructure upon annealing at 473 K. Exposure to benzene at 673 K enhances Pd step motion and yields primarily amorphous carbon upon cooling to room-temperature. Monolayer graphene domains, 10 ~ 30 nm in size, appear during annealing this sample at 873 K. Dosing benzene at 1100 K results in graphene domains with varying degrees of crystallinity, while post-deposition annealing at 1100 K for 1200 s yields monolayer graphene domains larger than 150 × 150 nm2. Our results, which indicate that graphene growth on Pd(111) using benzene requires deposition/annealing temperatures higher than 673 K, are in striking contrast with the reported growth of graphene using benzene at temperatures as low as 373 K on relatively inert Cu surfaces.
Anglický abstrakt
Using a combination of in situ ultra-high vacuum variable-temperature scanning tunneling microscopy, ex situ Raman spectroscopy, and scanning electron microscopy, we investigated the growth of graphene using benzene on Pd(111) at temperatures up to 1100 K. Benzene adsorbs readily on Pd(111) at room-temperature and forms an ordered superstructure upon annealing at 473 K. Exposure to benzene at 673 K enhances Pd step motion and yields primarily amorphous carbon upon cooling to room-temperature. Monolayer graphene domains, 10 ~ 30 nm in size, appear during annealing this sample at 873 K. Dosing benzene at 1100 K results in graphene domains with varying degrees of crystallinity, while post-deposition annealing at 1100 K for 1200 s yields monolayer graphene domains larger than 150 × 150 nm2. Our results, which indicate that graphene growth on Pd(111) using benzene requires deposition/annealing temperatures higher than 673 K, are in striking contrast with the reported growth of graphene using benzene at temperatures as low as 373 K on relatively inert Cu surfaces.
Klíčová slova anglicky
aromatic; benzene; graphene; STM; chemical vapor deposition; in situ
Vydáno
28.01.2020
ISSN
1936-0851
Ročník
14
Číslo
1
Strany od–do
1141–1147
Počet stran
7
BIBTEX
@article{BUT161239,
author="Pedro {Arias} and Jan {Tesař} and Abby {Kavner} and Tomáš {Šikola} and Suneel {Kodambaka},
title="In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111)",
year="2020",
volume="14",
number="1",
month="January",
pages="1141--1147",
issn="1936-0851"
}